| 摘要 |
PROBLEM TO BE SOLVED: To suppress rising of a contact resistance and corrosion of an upper- layer metal wiring at a contact hole, by allowing the height at the inner end part of an outer peripheral wiring which is, comprising the upper-layer metal wiring, directly connected over the entire periphery of a scribe line region to be lowest near the corner of a semiconductor element formation region. SOLUTION: On the surface of an inter-layer insulating film 131, upper-layer metal wirings 140-143 of tungsten or aluminum alloy and a common electric- discharge line 141a comprising an inside edge part and square outside edge part (outer-peripheral wiring) are provided. The common electric-discharge line 141a comprises a first part provided between the corner part of a semiconductor element formation region 103 and a point way from it by 130-150μm as well as other second part. The height of the upper surface of the common electric-discharge line 141a at the inside edge part of the first part is lower than that of the upper surface of that of the second part by the amount corresponding to the film-thickness of an inter-layer insulating film 121 (for example, 300 nm).
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