发明名称 |
PLASMA PROCESSING METHOD AND APPARATUS WITH CONTROL OF RF BIAS |
摘要 |
A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f. bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber. |
申请公布号 |
WO0058992(A1) |
申请公布日期 |
2000.10.05 |
申请号 |
WO2000US03313 |
申请日期 |
2000.02.10 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HOWALD, ARTHUR, M.;HOLLAND, JOHN, P.;OLSON, CHRISTOPHER |
分类号 |
H05H1/00;C23F4/00;H01J7/24;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;H03H7/40;H05B31/26;H05H1/46 |
主分类号 |
H05H1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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