发明名称 |
PLASMA PROCESSING SYSTEM |
摘要 |
A plasma processing system comprises a chamber capable of maintaining a vacuum inside, a discharge unit for evacuating the chamber, a gas supply unit for supplying process gas to the chamber, a lower electrode arranged in the chamber and adapted to support an object to be processed, and an upper electrode arranged opposite to the lower electrode. Outside the chamber is provided a high-frequency power supply, from which a power feeder extends to the lower electrode. Impedance adjustment means adjusts the impedance of a return current path that extends from the plasma of the process gas produced between the upper electrode and the lower electrode energized through the feeder by the high-frequency power supply back to the high-frequency power supply through the inner wall of the chamber.
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申请公布号 |
WO0059018(A1) |
申请公布日期 |
2000.10.05 |
申请号 |
WO2000JP02003 |
申请日期 |
2000.03.30 |
申请人 |
TOKYO ELECTRON LIMITED;SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. |
发明人 |
KUBOTA, KAZUHIRO;KAWABATA, ATSUSHI;TOZAWA, SHIGEKI;ISHIKAWA, HIRAKU;NISHIBE, HARUHITO |
分类号 |
H01L21/302;C23C16/50;C23C16/505;C23F4/00;H01J37/32;H01L21/205;H01L21/3065;H01L21/31;H05H1/46;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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