| 摘要 |
<p>A plasma processing system comprises a chamber capable of maintaining a vacuum inside, a discharge unit for evacuating the chamber, a gas supply unit for supplying process gas to the chamber, a lower electrode arranged in the chamber and adapted to support an object to be processed, and an upper electrode arranged opposite to the lower electrode. Outside the chamber is provided a high-frequency power supply, from which a power feeder extends to the lower electrode. Impedance adjustment means adjusts the impedance of a return current path that extends from the plasma of the process gas produced between the upper electrode and the lower electrode energized through the feeder by the high-frequency power supply back to the high-frequency power supply through the inner wall of the chamber.</p> |
