Semiconductor memory component with numerous word lines and individual or paired bit lines and two types of earth voltage lines

摘要

The component comprises numerous word lines (WL1---m), individual or paired bit lines (BL1---BLnB), first earth voltage lines (VSS) arranged in the direction parallel to the bit lines, and numerous memory cells (MC11---mn), each between a word and bit line. There are numerous second earth voltage lines arranged in a direction parallel to the word lines. Numerous feed voltage lines (VCC) extending in a direction parallel to the bit lines. An independent claim is included for the component mfr.