METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE AND CAPACITOR FABRICATED THEREBY

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device and a capacitor fabricated thereby is provided to fabricate a capacitor having excellent electric properties by preventing a storage electrode and a recessed plug below the electrode. CONSTITUTION: Holes are formed in an interlayer insulating film(34) to expose a semiconductor substrate(21). Recessed plugs(37) are formed within the holes. The upper surface of the recessed plug(37) is lower than the surface of the interlayer insulating film(34). A seed layer pattern(39) is formed along the bottom and a side wall of a groove part which is formed by the recessed plug(37) and the interlayer insulating film(34). A storage electrode(45) is arranged on the seed layer pattern(39). Undercut areas between the periphery of the storage electrode(45) and the interlayer insulating film(34) are filled with a dielectric film(47) having high dielectric constant and a plate electrode(49).