SEMICONDUCTOR INFRARED DETECTOR AND METHOD FOR THE PRODUCTION THEREOF

摘要

A semiconductor infrared detector comprising in the following order: a semiconductor substrate (1); a layer of electrically insulating material (2); and motifs (4) formed in a semiconductor layer (3), whereby said motifs (4) are formed from at least one island (7) that is connected to bridges (5, 6) which are connected to polarization electrodes (8, 9), whereby said bridges (5, 6) are lines having a most approximately constant width Ip and the islands (7) are zones having a width Ii that is greater than than that of the lines.