发明名称 Thin resist process by sub-threshold exposure
摘要 The present invention utilizes a sub-threshold exposure step on an optically sensitive resist that is applied to a semiconductor wafer to thin the resist below the thickness which can be achieved by normal spinning and/or thinning techniques. Furthermore, the thinned resist can be re-expose to UV energies so as to develop patterns on the surface of the semiconductor wafer. An apparatus for vibrating and rotating the resist during the sub-threshold step is also disclosed herein.
申请公布号 US6127686(A) 申请公布日期 2000.10.03
申请号 US19990229087 申请日期 1999.01.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 OBSZARNY, CHRISTOPHER E.
分类号 G03F7/16;G03F7/20;H01L21/00;(IPC1-7):G21K5/00 主分类号 G03F7/16
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