发明名称 |
Thin resist process by sub-threshold exposure |
摘要 |
The present invention utilizes a sub-threshold exposure step on an optically sensitive resist that is applied to a semiconductor wafer to thin the resist below the thickness which can be achieved by normal spinning and/or thinning techniques. Furthermore, the thinned resist can be re-expose to UV energies so as to develop patterns on the surface of the semiconductor wafer. An apparatus for vibrating and rotating the resist during the sub-threshold step is also disclosed herein.
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申请公布号 |
US6127686(A) |
申请公布日期 |
2000.10.03 |
申请号 |
US19990229087 |
申请日期 |
1999.01.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
OBSZARNY, CHRISTOPHER E. |
分类号 |
G03F7/16;G03F7/20;H01L21/00;(IPC1-7):G21K5/00 |
主分类号 |
G03F7/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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