A MANUFACTURING METHOD FOR CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A capacitor fabricating method is provided to increase the breakdown voltage of the capacitor by forming a rounding shaped lower electrode of the capacitor using SF6 gas as an etching gas. CONSTITUTION: After forming a BPSG film(13) on a silicon substrate(11), a contact hole is formed to expose a junction region(12). A TEOS spacer(14) is formed at both sidewalls of the contact hole. A first polysilicon layer(15A) and a core oxide are formed on the resultant structure. By depositing and etching a second polysilicon layer, a second polysilicon spacer(15B) is formed the both sidewalls of the first polysilicon and the core oxide patterns, thereby forming a lower electrode. After removing the core oxide, the lower electrode is etched using SF6 gases in order to form a rounding shaped upper portion thereof.