SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor memory in which a current caused by a process defect can be reduced and the power consumption at the time of a self-refresh can be reduced. SOLUTION: A DRAM 31 is provided with plural cell blocks BLK0-BLK3, and block control circuits 33a-33d supplying pre-charge signals PR0-PR3 pre- charging bit lines of each cell blocks BLK0-BLK3. Each block control circuit 33a-33d controls levels of the pre-charge signal PR0-PR3 to a reset level of a word line in accordance with an access state of each cell block BLK0-BLK3.