SEMICONDUCTOR DEVICE, ITS MANUFACTURE AND LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin-film transistor in which a semiconductor channel region is patterned. SOLUTION: On a glass substrate 101, a gate electrode 102, a gate insulting film 103, a source electrode 104, and a drain electrode 105 are formed, thereon a patterned insulating film is formed, and a region 110 on the gate electrode is removed. An organic semiconductor film is vapor-deposited on the removed region. An organic semiconductor film 107, formed in the region 110 where the patterned insulating film was removed, turns into a channel region and is isolated from the organic semiconductor film 108 on a patterned insulating film 106. That is, the organic semiconductor channel region is patterned in equal size as the gate electrode.