| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a structure, wherein the effective characteristics of elements are raised or the surface, which is within element regions, of a substrate can be prevented from being exposed, a the manufacturing method of the device. SOLUTION: This semiconductor device is constituted into a structure, wherein a silicon oxide film 102 is formed on the surface of a semiconductor substrate 101, and a silicon nitride film 103 which is used as the flattening stopper material for a buried oxide film, is formed on the surface of the film 102. After the trenches 105 are formed in the substrate 101, etching is performed on the side surfaces of the film 102 to make the side surfaces retreat. Oxidation is performed on the exposed surface of the substrate 101 to make round the surfaces of element regions. As a result, the effective size of the element regions can be made larger than the real size of the element regions.
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