| 摘要 |
PROBLEM TO BE SOLVED: To enable control of relative permittivity through deposition of a silicon insulating film of a specific material on a substrate and heat-treating the silicon insulating film to remove alkyl groups the desorption temperature which is lower than that of methyl groups from the insulating film. SOLUTION: A silicon material, containing cyanate groups without hydrogen, is reacted with a silicon material containing tertiary amine and phenyl groups in a reaction chamber 1 to deposit a silicon insulating film containing organic components such as alkyl groups on a substrate 5. A material gas is injected from a feed pipe 3 marked 'B' into the reaction chamber 1 directly or using a carrier gas. Tertiary amine supplied from a feed pipe 2 marked 'A' and a silicon material supplied from the feed pipe B3 react with each other in the reaction chamber 1, and a reaction product 7 is formed at low temperature. Thus a low-permittivity porous silica film suitable for use in reducing parasitic capacitance between conductors can be formed on a substrate at a low temperature.
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