INSPECTION METHOD OF SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable adequately estimating an N-type TFT(thin film transistor) and a P-type TFT which constitute a CMOS inverter circuit on a substrate, without taking time and labor. SOLUTION: In an active matrix substrate 200, a signal for inspection is inputted to a CMOS inverter circuit 61 which is to be an inspection object from an input terminal 546 while the electric potential is changed, and the potential change of a signal Vout outputted from an output terminal 547 is detected. Symmetric property of the potential change of the output signal Vout from the CMOS inverter circuit 61 in the region (vicinity of inverted potential) where an N-type TFT 10 and a P-type TFT 20 of the CMOS inverter circuit 61 turn on and off is obtained.