| 摘要 |
PROBLEM TO BE SOLVED: To maintain high resistance change even if a magnetically susceptible layer is thick by simplifying a method for controlling the thickness of a magnetically susceptible layer by forming a short circuit electrode of a semiconductor magnetoresistive element facing both sides of a magnetically susceptible semiconductive layer. SOLUTION: A magnetically susceptible semiconductive layer 2 which is a magnetoresistive film of a semiconductor of high carrier mobility such as InSb, InAs is formed in a surface of a substrate 11 of a semiconductor magnetoresistive element 10 and a shortcircuit electrode 13 is formed on the magnetically susceptible semiconductive layer 12. When the magnetically susceptible semiconductive layer 12 is thick, the shortcircuit electrode 13 is buried in a pair of recessed parts 17a, 17b provided in opposition to both sides thereof. An electrode part 14 for collecting up an electric signal is provided on the magnetically susceptible semiconductive layer 12 by the same material and constitution as the shortcircuit electrode 13. As a result, it is possible to obtain a magnetoresistive element 10 while adopting a method for controlling a magnetically susceptible layer thickness readily at a low cost and high resistance change can be maintained even if the magnetically susceptible layer 12 is thick. |
