| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermoelectric device comprising electrodes which exhibit high junction strength and satisfactory electrical junction characteristics formed on a thermoelectric layer of Mg2Si based thermoelectric material. SOLUTION: Granules of Mg2Ge or power of additives are crushed and mixed with granules of Mg2Si. The mixture is charged between two electrode plates (electrode layers) 12 of Ni, is formed and is sintered at a temperature of 1,180-1,200 deg.C on a plasma sintering furnace. As a result, Mg2Si is sintered integrally with Ni. Diffused regions 13 are formed, where Mg and Ni diffuse in each other at junctions between Mg2Si and Ni. The electrical resistance of the junction between a jointed thermoelectric material layer and the electrode layers which are jointed by sintering is 0.01Ω/cm2, which is a low resistance and exhibits satisfactory electrical characteristics. Also, in the case of a thermoelectric device 10 sintered at a temperature of 1,100-1,210 deg.C, the tensile strength of the electrode layers 12 against the thermoelectric material 11 is high.
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