| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element of high light emitting efficiency by suppressing the dispersion of Zn to an excitation region and preventing deterioration of quality in the visible light semiconductor laser of a Zn diffused window structure. SOLUTION: A clad layer 130, the active layer 110 of distortion compensation multiplex quantum well structure, and a clad layer 120 are provided on a semiconductor substrate. Zn diffusion regions 230 are formed at the end parts, and the semiconductor laser of window structure is obtained. Since the active layer 110 is made into distortion compensation multiplex quantum well structure, thermal treatment for Zn diffusion can be executed at a low temperature and in a short time. The diffusion of An to the excitation region is suppressed, and the deterioration of quality is prevented. Thus, the visible light semiconductor laser element of Zn diffused window structure, whose light emitting efficiency is high and whose characteristic is satisfactory, can be manufactured.
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