发明名称 |
DEFECTIVE PATTERN ANALYZING METHOD FOR SEMICONDUCTOR STORAGE DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a defective pattern analyzing method for a semiconductor storage device by recognizing even a defect present at the end of a defective address space on one decision criteria without a plurality of branched conditions, for simplified recognition process. SOLUTION: This is related to a semiconductor storage device evaluating device wherein a defective address of a semiconductor device is detected, from which a form of specific defective pattern is recognized. A virtual address space 10 is provided which contains an actual defective address space 9 and comprises at least one line of address outside the actual defective address space 9. The defect at the end of the virtual address space 10 is zero. Further, a virtual defect is caused at the end of the virtual address space 10 according to the information of the actual defect address space 9.
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申请公布号 |
JP2000269284(A) |
申请公布日期 |
2000.09.29 |
申请号 |
JP19990068626 |
申请日期 |
1999.03.15 |
申请人 |
IWATE TOSHIBA ELECTRONICS KK;TOSHIBA CORP |
发明人 |
TAKAHASHI CHIKAU;MATSUMOTO NAOKI |
分类号 |
G11C29/44;G01R31/28;G11C29/00;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
G11C29/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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