发明名称 DEFECTIVE PATTERN ANALYZING METHOD FOR SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a defective pattern analyzing method for a semiconductor storage device by recognizing even a defect present at the end of a defective address space on one decision criteria without a plurality of branched conditions, for simplified recognition process. SOLUTION: This is related to a semiconductor storage device evaluating device wherein a defective address of a semiconductor device is detected, from which a form of specific defective pattern is recognized. A virtual address space 10 is provided which contains an actual defective address space 9 and comprises at least one line of address outside the actual defective address space 9. The defect at the end of the virtual address space 10 is zero. Further, a virtual defect is caused at the end of the virtual address space 10 according to the information of the actual defect address space 9.
申请公布号 JP2000269284(A) 申请公布日期 2000.09.29
申请号 JP19990068626 申请日期 1999.03.15
申请人 IWATE TOSHIBA ELECTRONICS KK;TOSHIBA CORP 发明人 TAKAHASHI CHIKAU;MATSUMOTO NAOKI
分类号 G11C29/44;G01R31/28;G11C29/00;H01L21/66;(IPC1-7):H01L21/66 主分类号 G11C29/44
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