| 摘要 |
PROBLEM TO BE SOLVED: To reduce C-B capacitance and at the same time enable high-current density operation by forming a single-crystal film of a second conductivity type on a single-crystal film of a first conductivity type with a second concentration and using the single-crystal film of the second conductivity type as a base. SOLUTION: An opening 101 is formed in a part of the region in p+-type polycrystalline silicon 11 for base electrode and a n-type single-crystal silicon- germanium layer 13 for collector with a second concentration is formed on a n-type epitaxial silicon layer 4 and a n-type single-crystal silicon-germanium layer 7 with a first concentration in the opening 101. A region 14, comprising a single-crystal silicon-germanium alloy base and a single-crystal silicon film located thereon, is formed on the single-crystal silicon-germanium layer 13. As a result C-B capacitance can be reduced, and at the same time high-current density operation becomes possible.
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