| 摘要 |
PROBLEM TO BE SOLVED: To reduce degradation in laser characteristics by forming a current leak preventing layer which, with a hetero junction between a semiconductor substrate and an embedded layer on both sides of a mesa stripe, comprises a quantum well layer of a material lattice-conforming with the semiconductor substrate at an absorption edge wavelength shorter than that of the embedded layer. SOLUTION: On a semiconductor substrate 1, a first clad layer 2, active layer 3, and second clad layer 4 are sequentially formed with a mesa stripe 6 formed down to a position lower than the bottom surface of the active layer 3. On both sides of the mesa stripe 6, an embedded layer 8 is formed on the semiconductor substrate 1, on which a current block layer 9 is formed. The semiconductor substrate 1 is heterojointed to the embedded layer 8 on both sides of the mesa stripe 6, and a current leak preventing layer 7 which comprises a quantum well layer of a material which lattice-conforms to the semiconductor substrate 1 at an absorption edge wavelength shorter than that of the embedded layer 8 is formed.
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