| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve surge tolerance of ESD(electrostatic discharge) by increasing the gate potential, when surge is applied and increasing the operation current of a transistor. SOLUTION: In a chip 2, an LDMOSFET 11 is formed, and a Zener diode group 13 for boosting a gate voltage is formed in a state in which one end is connected with a gate terminal of the LDMOSFET 11. A pad 5b for booster element connection is formed in the chip 2 and electrically connected with the other end of the Zener diode group 13. In the outside of the IC chip 2, a bonding wire 6a which is connected with a high voltage side terminal of the LDMOSFET 11 in a parallel state with the Zener diode group 13 is made a parasitic inductance L, when surge is applied.
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