| 摘要 |
PROBLEM TO BE SOLVED: To avoid the facilities from becoming enormous, when a plurality of types of surface processes are effected by a plasma surface processor, in which a semiconductor substrate such as a silicon wafer, etc., fed into a core chamber is mounted in the surface processor of a plasma processing unit connected to this core chamber via a gate value, and the surface processing is effected by plasma therein. SOLUTION: In a condition that supplies a control means 12 of a processing gas for a plasma surface processing unit is fitted on a plasma surface processing unit 2, the plasma surface processing unit 2 is structured so as to be separated from a core chamber 1, and by an exchange of the plasma surface processing unit, it is possible to effect a plurality of types of surface processes by use of the one core chamber 1. |
