| 摘要 |
PROBLEM TO BE SOLVED: To reduce particles or foreign matters attaching on a processed substrate and to curtail time for maintenance by stopping use of a gas ring provided inside a reaction chamber. SOLUTION: This plasma processing device processes a processed substrate 3 introduced in a reaction chamber 1 whereby a dielectric window 17 is disposed on the reaction chamber 1 just close to the dielectric window 17, coils 20 are disposed the outside of the reaction chamber 1 and plasma is generated from a process gas introduced into the vacuum reaction chamber 1 by applying a high frequency electric power on the coils 20. In the device, a gas shower plate 5 of dielectric is disposed right under the dielectric window 17 and the process gas can be supplied inside the reaction chamber 1 in shower. |
