| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of a gate insulating film and to make the quantity of charges of carriers in a floating gate accurately controllable, and, in addition, to make the power consumption of a semiconductor storage device unnecessary at writing. SOLUTION: A semiconductor storage device is provided with a Mott insulator 7 which is formed in such a way that one part of the insulator 7 is in contact with a floating gate 6 and the other part is in contact with a P-type silicon substrate 1. Metal-insulator phase transition is caused in the insulator 7. At the time of injecting or discharging electrons into and from the floating gate 6 as carriers, the injection and discharge are not performed through a gate oxide film 5, but through the metallic phase of the Mott insulator 7.
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