| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable, high-performance magnetic device at a high yield by reducing variations in magnetic properties in a single wafer. SOLUTION: A magnetic film, which contains as a main component at least one kind of element selected from among Co and Fe, and as an auxiliary component at least one kind selected from among Ni, Ta, Zr, Nb, silicon oxide, aluminum oxide, tantalum oxide, and titanium oxide, has at least one kind of element selected from among Pt, Pd and Rh added thereto. During a film formation step using a film formation method such as a sputtering method, the magnetic film is formed by applying external magnetic field, having a predetermined intensity of magnetic field to a substrate in a predetermined direction.
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