发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>To suppress spike voltage generated at turn-off operation, a semiconductor device according to the invention comprises a first region composed of a first conductor, a second region composed of a second conductor formed on top of the first region, a third region composed of the first conductor formed on top of the second region and a fourth region composed of the second conductor formed on top of the third region. The second region is comprised of a depletion-layer forming auxiliary layer having a short lifetime and formed in the vicinity of the third region, a tail-current suppression layer having a shorter lifetime than that of the depletion-layer forming auxiliary layer and formed in the vicinity of the first region and a depletion-layer forming suppression layer having a longer lifetime than that of the depletion-layer forming auxiliary layer and formed between the depletion-layer forming auxiliary layer and the tail-current suppression layer. <IMAGE></p> |
申请公布号 |
EP1039547(A1) |
申请公布日期 |
2000.09.27 |
申请号 |
EP19980941794 |
申请日期 |
1998.09.10 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SATOH, KATSUMI;MORISHITA, KAZUHIRO;KOGA, SHINJI |
分类号 |
H01L29/744;H01L29/10;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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