| 摘要 |
A method for forming an isolation region of a semiconductor device includes the steps of forming first and second insulating layers on a substrate, removing the second insulating layer over an isolation region, forming an oxide layer by oxidizing the first insulating layer over the isolation region, forming sidewall spacers at sides of the second insulating layer and over the isolation region, forming a trench by etching the oxide layer and the substrate at the isolation region, removing the sidewall spacers, forming a third insulating layer on the substrate in the trench, and forming an isolation layer in the trench.
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