发明名称 Contact structure and associated process for production of semiconductor electronic devices and in particular nonvolatile EPROM and flash EPROM memories
摘要 A process creates contacts in semiconductor electronic devices and in particular on bit lines of non-volatile memories with cross-point structure. The cross-point structure includes memory cell matrices in which the bit lines are parallel unbroken diffusion strips extending along a column of the matrix with the contacts being provided through associated contact apertures defined through a dielectric layer deposited over a contact region defined on a semiconductor substrate at one end of the bit lines. The process calls for a step of implantation and following diffusion of contact areas provided in the substrate at opposite sides of each bit line to be contacted to widen the area designed to receive the contacts.
申请公布号 US6124169(A) 申请公布日期 2000.09.26
申请号 US19970999403 申请日期 1997.12.29
申请人 STMICROELECTRONICS, S.R.L. 发明人 CAMERLENGHI, EMILIO;CAPRARA, PAOLO;FONTANA, GABRIELLA
分类号 H01L21/28;H01L21/60;H01L21/768;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 H01L21/28
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