Semiconductor type pressure sensor

摘要

A pressure sensor superior in pressure resistance and capable of covering from a low to high pressure range as a measuring range is to be provided. Plural pressure sensing sections for high and low pressures are formed on a silicon board, the pressure sensing sections each com ing an outer frame portion, a diaphragm portion, a strain gauge portion and an electrode portion. The silicon board side with the strain gauge portions formed thereon and an insulating substrate having electrode take-out portions are bonded together in such a manner that the strain gauge portions are hermetically sealed and that the electrode portions on the silicon board and the electrode take-out portions of the insulating substrate are electrically connected with each other, to constitute a pressure sensing unit. The pressure sensing unit, a low-melting glass and a stem are laminated together in such a manner that lead pins are electrically bonded by solder to the electrode portions of the silicon board through the electrode take-out portions of the insulating substrate. In this state, the low-melting glass is melted to bond the pressure sensing unit and the stem with each other.