| 摘要 |
PROBLEM TO BE SOLVED: To efficiently grow a high quality single crystal SiC which is free from the formation of powdery crystals and the occurrence of micro-pipe defects or the like by collision bonding of active atoms in the space of flight. SOLUTION: The single crystal is grown on the surface of a SiC single crystal substrate 7 by ejecting a high temp. plasma jet flame PJ from a nozzle part 5 by cooling an inert Ar gas from the outside, which gas is supplied into an arc discharge area 3 generated by applying a direct current voltage between an anode 1 and a cathode 2 of a plasma thermal spraying gun, on the other hand, decomposing silicon and carbon raw materials at the high temp. arc discharge area 3, which raw materials are introduced into a center part of the cathode 2 or its neighboring part, then ejecting the formed active silicon and carbon atoms together with the plasma jet flame PJ with a speed near to the speed of sound, and keeping the SiC single crystal substrate 7 at a temp. of 800-2,500 deg.C, which base plate is arranged in the ejected plasma jet flame PJ.
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