Semiconductor device and fabrication method using a germanium sacrificial gate electrode plug

摘要

Semiconductor devices and fabrication processes which rely on the use of sacrificial gate electrode plugs are provided. In one embodiment, a germanium bearing plug is used to form a gate electrode. The germanium plug may advantageously be removed using a solution which leaves underlying portions of the oxide layer intact. In another embodiment, spacers are formed adjacent sidewalls of a sacrificial plug and active regions are formed adjacent the sacrificial plug. The sacrificial plug is then removed to form an opening between the spacers and a conductive layer is deposited over the substrate to form a gate electrode and active region contacts.