发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: A semiconductor device is provided to have improved noise features by comprising a low resistance layer under an interconnection. CONSTITUTION: An amplification terminal amplifies signals being input into a signal input pad(116). A low resistance layer(121) is formed under the signal input pad(116), and under an interconnection(115) which connects the signal input pad(116) and the amplification terminal. The low resistance layer(121) has equivalent potential as a semiconductor substrate(101) or a well. The low resistance layer(121) is made of silicide. The resistance of the substrate(101) can be reduced by making the low resistance layer(121) as ground potential. Therefore, thermal noises which are created by substrate resistance can be reduced.
申请公布号 KR20000057834(A) 申请公布日期 2000.09.25
申请号 KR20000004453 申请日期 2000.01.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MORIHUJI EIJI
分类号 H01L21/3205;H01L21/00;H01L21/336;H01L21/8234;H01L23/52;H01L27/01;H01L27/04;H01L27/088;H01L29/06;H01L29/10;H01L29/40;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L27/04 主分类号 H01L21/3205
代理机构 代理人
主权项
地址