SEMICONDUCTOR DEVICE AND IT'S FABRICATION METHOD

摘要

PURPOSE: Semiconductor device provides decreased electrical resistance of BiCMOS semiconductor device. CONSTITUTION: Semiconductor device comprising a substrate(12), a bipolar transistor(14,16) having at least one of silicide layer surface of among an emitter(42), a base(26) and a collector(22); MOS transistor(18,20) including a gate electrode(40) having the silicide layer surface; the silicide of diffusion region of the bipolar transistor(14,16)