| 摘要 |
PURPOSE: A semiconductor device having a metal nitride layer and a metal silicide layer both having high melting point, and a fabrication method thereof are provided to prevent deterioration of the device caused by a defective titanium nitride layer. CONSTITUTION: A dielectric layer(102) is formed on a silicon substrate(101), and a contact hole is then formed in the dielectric layer(102) by a selective etch. Next, a titanium layer(104) and a titanium silicide layer(105) are successively formed both on the dielectric layer(102) and within the contact hole. A titanium nitride layer(106) and a secondary titanium silicide layer(107) are then successively formed on the titanium silicide layer(105), and a secondary titanium nitride layer(108) is subsequently formed on the secondary titanium silicide layer(107). All the layers on the dielectric layer(102) are removed, and therefore a conductive plug(104-108) in the contact hole is obtained. Finally, an aluminum alloy strip(109) is formed on the plug(104-108). In particular, the titanium silicide layers(105,107) absorb thermal stress during high-temperature processes, thereby preventing defectiveness of the titanium nitride layers(106,108). |
