发明名称 VERTICAL FUSE AND METHOD OF FABRICATION
摘要 PURPOSE: A vertical fuse and fabrication method is prvided for reducing the area occupied by fuses on a semiconductor chip, and for adjusting the fuse resistance for the fuses in a semiconductor device. CONSTITUTION: A fuse for semiconductor devices includes a substrate having a conductive path disposed on a surface thereof, a dielectric layer disposed on the substrate and a vertical fuse disposed perpendicularly to the surface through the dielectric layer and connecting to the conductive path, the vertical fuse forming a cavity having a liner material disposed along vertical surfaces of the cavity, the vertical surfaces being melted to blow the fuse.
申请公布号 KR20000058155(A) 申请公布日期 2000.09.25
申请号 KR20000008763 申请日期 2000.02.23
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 NARAYAN CHANDRASEKHAR;VAN DEN BERG ROBERT;HOINKIS MARK;IGGULDEN ROY;WEBER STEFAN J;BRINTZINGER AXEL CHRISTOPH
分类号 H01H85/00;H01H69/02;H01L21/82;H01L23/525;(IPC1-7):H01L21/82 主分类号 H01H85/00
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