发明名称 FERROELECTRICS CAPACITOR, SEMICONDUCTOR DEVICE, AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a ferroelectrics capacitor which is easily manufactured, and has less leak current while fatigue characteristics and imprint characteristics are improved, by allowing a ferroelectrics capacitor insulating film to comprise Pb(Rz,Ti)O3 which contains excessive Pb. SOLUTION: A ferroelectrics capacitor comprises a lower-side electrode 32 comprising Pt film formed on an Si substrate 31, a ferroelectrics capacitor insulating film 33 comprising Pb(Zr,Ti)O3 formed on the lower-side electrode 32, and an upper part electrode 34 formed on the ferroelectrics capacitor 33. Thus, ferroelectrics capacitor film 33 comprises Pb by a range of 1.04-1.12, in Pb/(Zr+Ti) ratio, with a range of 1.07-1.09 preferred, which optimizes the amount of Pb present in the grain boundary in the ferroelectrics capacitor insulating film 33. Thus, with no damage to the leak current characteristics, the fatigue characteristics of ferroelectrics capacitor is improved.
申请公布号 JP2000260954(A) 申请公布日期 2000.09.22
申请号 JP19990057601 申请日期 1999.03.04
申请人 FUJITSU LTD 发明人 CROSS JEFFREY SCOTT;SAKAI TSUYOSHI;FUJIKI MITSUSHI;TSUKADA MINEHARU
分类号 H01L21/8247;H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/108;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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