| 摘要 |
PROBLEM TO BE SOLVED: To suppress blocking of carrier conduction and reduction of on-current due to surface roughness on a boundary surface between a semiconductor film and a gate insulation film. SOLUTION: Surface roughness is made larger than the mean free path of carriers in a semiconductor film. In an ordinary thin-film transistor, its surface roughness is set to 10 nm or more. A polycrystalline thin-film transistor, crystalized through laser irradiation, is set to 1 nm or more in surface roughness. The transistor is manufactured through a step of removing surface roughness smaller than a mean free path. In addition, it is also manufactured without a step for removing surface roughness larger than the mean free path. A potential distribution 11 is formed along the surface roughness, and carriers can be considered to be conducted along equipotential lines in approximation, so that the conduction of carriers is not prevented by the surface roughness.
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