| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the movable ions of a contaminant from being diffused into a semiconductor substrate by forming nuclei for capturing movable ions that are diffused into the semiconductor substrate for reducing its element characteristics on the reverse side region of the substrate, a bevel region, a peripheral-cut region, and one region of a dicing region. SOLUTION: A photo resist for mask is spin-coated at other parts to form a mask 3 so that an area ranging from a part being inside, by distance (s), from one end of an element region 4 of a semiconductor substrate 1 to a peripheral cut part 2 is exposed. Then, a P ion is used, ion plantation is made, the P ion is implanted so that it is distributed in the depthwise direction of the semiconductor substrate 1 of a part that is not covered with the mask 3, the peripheral cut region 2 of the semiconductor substrate 1 is set to a region 5 with a nucleus for capturing Cu, and the region 5 is provided so that a part 7 that overlaps with the peripheral cut region 2 by approximately several mm can be formed.</p> |
