| 摘要 |
PROBLEM TO BE SOLVED: To form a copper wiring film cleanly and easily by applying a semiconductor substrate with a solution containing an organic copper compound, and decomposing the coated organic copper compound. SOLUTION: A silicon oxide film 2 is formed on the surface of a semiconductor substrate 1, on which a barrier film 3 is formed. Then a photoresist film is provided for thermal process, and an organic copper compound is applied and then it is decomposed to form a copper wiriting film 5 as a recessed part between the photoresist films. The photoresist film is removed and the barrier film 3 is removed by etching with the copper wiring film 5 as a mask, forming a first wiring film A. Further, an inter-layer insulating film 6 is so formed as to cover the first wiring film A, and a copper wiring film 9 is formed in the via hole of the insulating film 6, on which a second wiring film B of a barrier film 10 and copper wiring film 11 is formed as with the first wiring film A.
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