| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of Al wiring which realizes low cost and high performance by preventing deterioration of EM resistance, when forming an Al wiring. SOLUTION: After a Ti film 2 is formed on a semiconductor substrate 1 and cooled to about room temperature, an Al film is formed. After the thickness of the film exceeds a specified thickness, the temperature is raised to a temperature for generating reflow, and an Al wiring film 3 is formed by high- temperature sputtering for eliminating irregular reaction between Ti and Al. In this forming method of an Al wiring, a TiN film 4 which is nitrified by including N2 gas into process gas during the formation of the Ti film 2 on the semiconductor substrate 1 is formed on the Ti film 2, and thereafter the Al wiring film 3 is formed and made to reflow through the use of high- temperature sputtering.
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