| 摘要 |
PROBLEM TO BE SOLVED: To transfer a complicated pattern by an exposure method by setting the threshold energy for exposure at a proper position in the multivalued exposure energy to form a target pattern having a minimum line width corresponding to the line width of a fine pattern. SOLUTION: A pattern filed not subject to projection exposure, that is, a two-beam interference exposure pattern having the sensitivity the same as or lower than the threshold energy of the resist disappear in a development process. A pattern field subjected to projection exposure wit the exposure energy not higher than the threshold energy of the resist forms an exposure pattern having the resolution of two light beam interferemetry exposure which is determined by a combination of a projection exposure pattern and a two-beam interferemetry exposure pattern. A pattern fluid subjected to projection exposure with the exposure energy not lower than the threshold energy forms any given pattern (corresponding to a mask) just like the case of being subject to only the projection exposure. For another advantage, the field subjected to the two- beam interference exposure which has the highest resolution has the much larger depth of focus than the field subjected to the usual exposure.
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