Layer structure arrangement used in the production of p-channel field effect transistors has silicon and germanium layers on a single crystalline substrate

摘要

Layer structure arrangement comprises a single crystalline substrate, a first layer of relaxed Si1-xGex (where x = 0.35-0.5), a second layer of Si1-x, a third layer of non-doped silicon, a forth layer of non-doped Si1-x, a fifth layer of germanium, a sixth layer of Si1-wGew (where w = 0.5 to less than 1.0), and a seventh layer of Si1-xGex.