发明名称 SEMICONDUCTOR MEMORY UNIT
摘要 computer engineering. SUBSTANCE: device may be used in synchronous dynamic random access memory units for synchronous access to memory matrix with system synchronization pulse from external system, for example, from central processor. Synchronous memory unit has memory matrix, which is split into two memory banks. Each bank is either in active cycle or in regeneration cycle. Each bank contains line decoder, and input-output buffers. Chosen memory bank responds to activation signal and works in active cycle, while non-chosen memory bank responds to no-activation signal operates in regeneration mode. EFFECT: free synchronization of input and output data by external system synchronization pulse with high data transmission rate. 4 cl, 62 dwg, 3 tbl
申请公布号 RU2156506(C2) 申请公布日期 2000.09.20
申请号 RU19930052160 申请日期 1993.10.01
申请人 SAMSUNG EHLEKTRONIKS KO., LTD. 发明人 CHUROO PARK;KHUN-SOON JANG;CHULL-SOO KIM;MUNG-KHO KIM;SEUNG-KHUN LI;SI-JOL LI;KHO-CHEOL LI;TAE-DZHIN KIM;JUN-KHO CHOI
分类号 G11C7/00;G11C7/22;G11C11/34;H03K17/693;(IPC1-7):G11C7/00 主分类号 G11C7/00
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