发明名称 |
METHOD OF PREPARING CHARGE FOR GROWING LANTHANUM-GALLIUM SILICATE MONOCRYSTALS |
摘要 |
crystal growing. SUBSTANCE: charge for growing stoichiometric lanthanum-gallium silicate monocrystals for piezoelectric and laser engineering includes stoichiometric mixture of lanthanum and silicon oxides and gallium metal. Resultant mixture is heated in presence of oxidant to initiate spontaneous high-temperature synthesis. Mixing and heating are conducted in two stages with different content of gallium. EFFECT: improved required characteristics. 3 cl, 1 tbl
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申请公布号 |
RU2156326(C2) |
申请公布日期 |
2000.09.20 |
申请号 |
RU19980109547 |
申请日期 |
1998.05.22 |
申请人 |
OS-TEKHNOLODZHI";OS TEKHNOLODZHI |
发明人 |
KOZNOV G.G. |
分类号 |
C30B29/22;C01G15/00;C30B15/00;(IPC1-7):C30B29/22 |
主分类号 |
C30B29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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