发明名称 METHOD OF PREPARING CHARGE FOR GROWING LANTHANUM-GALLIUM SILICATE MONOCRYSTALS
摘要 crystal growing. SUBSTANCE: charge for growing stoichiometric lanthanum-gallium silicate monocrystals for piezoelectric and laser engineering includes stoichiometric mixture of lanthanum and silicon oxides and gallium metal. Resultant mixture is heated in presence of oxidant to initiate spontaneous high-temperature synthesis. Mixing and heating are conducted in two stages with different content of gallium. EFFECT: improved required characteristics. 3 cl, 1 tbl
申请公布号 RU2156326(C2) 申请公布日期 2000.09.20
申请号 RU19980109547 申请日期 1998.05.22
申请人 OS-TEKHNOLODZHI";OS TEKHNOLODZHI 发明人 KOZNOV G.G.
分类号 C30B29/22;C01G15/00;C30B15/00;(IPC1-7):C30B29/22 主分类号 C30B29/22
代理机构 代理人
主权项
地址