| 摘要 |
An electrostatic holding apparatus in which a voltage is applied to an conductive electrode covered with an insulating dielectric layer, in order to cause the insulating dielectric layer to electrostatically attract an object. The insulating dielectric layer is substantially formed of a sintered body produced by addition of 2.5-5 wt. % titania (TiO2) and 5 wt. % or less titanium nitride (TiN) powder to powder of a high resistivity ceramic having a volume resistivity of 1x1014 OMEGA xcm or higher at 25 DEG C., followed by kneading, forming, and sintering. The sintered body has a volume resistivity of 1x108-8x1013 OMEGA xcm at 25 DEG C. The volume resistivity of the insulating dielectric layer is decreased so as to increase an electrostatic attraction force, and an object can be removed at the time of stopping application of voltage. Further, the electrostatic holding apparatus does not generate impurities that would otherwise contaminate semiconductor devices. In addition, neither fine cracks nor pores remain, so that the electrostatic holding apparatus excellent in terms of withstand voltage.
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