发明名称 |
Methods and devices related to electrodes for p-type group III nitride compound semiconductors |
摘要 |
An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.
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申请公布号 |
US6121127(A) |
申请公布日期 |
2000.09.19 |
申请号 |
US19990440860 |
申请日期 |
1999.11.16 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
SHIBATA, NAOKI;UMEZAKI, JUNICHI;ASAI, MAKOTO;UEMURA, TOSHIYA;KOZAWA, TAKAHIRO;MORI, TOMOHIKO;OHWAKI, TAKESHI |
分类号 |
H01L21/285;H01L29/45;H01L33/32;H01L33/40;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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