发明名称 Resistor fabrication
摘要 The fabrication of a resistor structure is described. A resistive region is formed over the top of a substrate. Trenches are formed from the top side of the substrate in scribe line regions where the wafer is to be separated to form resistor modules. Contact layers are formed over the top side of the substrate and are electrically coupled to each end of the resistive region, respectively. The contact layers are also formed over the sidewalls of the trenches. The wafer is separated through the trenches, creating resistor modules having sidewall contact regions.
申请公布号 US6121119(A) 申请公布日期 2000.09.19
申请号 US19970865357 申请日期 1997.05.29
申请人 CHIPSCALE, INC. 发明人 RICHARDS, JOHN G.;FLORES, HECTOR
分类号 H01C1/14;H01C17/00;H01C17/06;H01L21/02;H01L27/08;(IPC1-7):H01L21/78;H01L21/301;H01L21/46 主分类号 H01C1/14
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