| 摘要 |
The dimensional precision and accuracy of sub-micron-sized, in-laid metallization patterns, e.g., of electroplated copper or copper alloy, formed in the surface of a dielectric layer are significantly improved by utilizing a layer of a sputter-resistant mask material formed of a high atomic mass metallic element or compound thereof during reactive ion etching of the dielectric layer by a fluorine-containing plasma for forming sub-micron-dimensioned recesses therein. After filling of the recesses, planarization, as by CMP, is conducted wherein excess thickness of the metal layer is removed, together with underlying portions of the sputter-resistant mask layer.
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