METHOD FOR SYNTHESIZING SINGLE CRYSTAL AlN THIN FILMS OF LOW RESISTANT n-TYPE AND LOW RESISTANT p-TYPE

摘要

In growing single AlN thin films on a semiconductor substrate by rapidly cooling a beam of atomic Al and atomic or molecular N obtained by exciting or decomposing N2 with an electromagnetic wave on the semiconductor substrate, an n-type dopant and a p-type dopant in the form of atomic beams are simultaneously doped in a crystal, so that pairs of an n-type dopant and a p-type dopant are formed in the crystal to synthesize single crystal AlN thin films of low resistant n-type and low resistant p-type. <IMAGE>