| 摘要 |
PURPOSE: A method for correcting an optical proximity effect and a method for forming a mask data are provided to become applicable to various cases in connection with a shape and a size of a design pattern, and a space width and a positional relation between the design patterns. CONSTITUTION: In a manufacture process for a semiconductor device, an optical proximity effect correcting method includes an addition step, an examination step, a decision step, and a deletion step. The addition step has adding a partial correcting region(11) to a periphery of a design pattern(Pd). The correcting regions(11) added to the adjacent design patterns(Pd) confront each other, and each correcting region(11) and corresponding each design pattern(Pd) constitute a corrected design pattern. Next, in the examination step, a space width between the adjacent corrected design patterns is examined, and it is decided whether the examined space width is less than a predetermined value or not in the subsequent decision step. When the space width is less, an error pattern(EP2) is produced and then parts of the correcting regions(11) overlapped with the error pattern(EP2) are deleted in the final deletion step. |
